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FQB58N08 Datasheet, Fairchild Semiconductor

FQB58N08 mosfet equivalent, n-channel mosfet.

FQB58N08 Avg. rating / M : 1.0 rating-11

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FQB58N08 Datasheet

Features and benefits


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* 57.5A, 80V, RDS(on) = 0.024Ω @VGS = 10 V Low gate charge ( typical 50 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanc.

Application

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D TM Features
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Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

Image gallery

FQB58N08 Page 1 FQB58N08 Page 2 FQB58N08 Page 3

TAGS

FQB58N08
N-Channel
MOSFET
FQB50N06
FQB50N06L
FQB55N06
Fairchild Semiconductor

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